公开(公告)号：US20230134596A1

公开(公告)日：2023-05-04

申请号：US17514039

申请日：2021-10-29

Applicant: Texas Instruments Incorporated

Inventor： Fuchao Wang ,  James Klawinsky ,  Albert M Estevez ,  Billy A Wofford

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  C23C14/06

Abstract: A method of fabricating an integrated circuit includes forming a titanium nitride layer over a semiconductor substrate in a process chamber and forming a poisoned titanium layer on the titanium nitride layer in the process chamber. Forming the titanium nitride layer includes sputtering titanium from a titanium sputter target using a first nitrogen flow. Forming the poisoned titanium layer includes sputtering titanium from the titanium sputter target using a lower second nitrogen flow. The method also forms an aluminum layer on the poisoned titanium layer.