公开(公告)号：US20220300016A1

公开(公告)日：2022-09-22

申请号：US17205155

申请日：2021-03-18

申请人： Texas Instruments Incorporated

发明人： Masahiro Yoshioka ,  Jeffrey David Johnson

IPC分类号： G05F1/46 ,  H03K17/60

摘要： A bandgap voltage reference circuit includes first and second transistors (e.g., 3-terminal BJTs or diode-connected BJTs), and a PTAT element (e.g., resistance or capacitance). The first transistor is at a first die location, and operates with a first base-emitter voltage. The second transistor is at a second die location, and operates with a second base-emitter voltage. Each of the first and second transistors may include multiple individual parallel-connected transistors. The PTAT element is operatively coupled to the first and second transistors such that a voltage difference between the first and second base-emitter voltages drops across the PTAT element. The first and second locations are separated by a distance (e.g., 1.5% or more of die length, or such that the respective centroids of the first and second transistor are spaced from one another). Such spatial distribution helps mitigate voltage shift induced by mechanical stress, and is insensitive to process variation.

公开(公告)号：US11429125B1

公开(公告)日：2022-08-30

申请号：US17205155

申请日：2021-03-18

申请人： Texas Instruments Incorporated

发明人： Masahiro Yoshioka ,  Jeffrey David Johnson

IPC分类号： G05F1/10 ,  G05F1/46 ,  H03K17/60 ,  H03M1/66

摘要： A bandgap voltage reference circuit includes first and second transistors (e.g., 3-terminal BJTs or diode-connected BJTs), and a PTAT element (e.g., resistance or capacitance). The first transistor is at a first die location, and operates with a first base-emitter voltage. The second transistor is at a second die location, and operates with a second base-emitter voltage. Each of the first and second transistors may include multiple individual parallel-connected transistors. The PTAT element is operatively coupled to the first and second transistors such that a voltage difference between the first and second base-emitter voltages drops across the PTAT element. The first and second locations are separated by a distance (e.g., 1.5% or more of die length, or such that the respective centroids of the first and second transistor are spaced from one another). Such spatial distribution helps mitigate voltage shift induced by mechanical stress, and is insensitive to process variation.