公开(公告)号：US20230031204A1

公开(公告)日：2023-02-02

申请号：US17963149

申请日：2022-10-10

Applicant: Texas Instruments Incorporated

Inventor： Klaas De Haan ,  Mikhail Valeryevich Ivanov ,  Tobias Bernhard Fritz ,  Swaminathan Sankaran ,  Thomas Dyer Bonifield

IPC: H01L23/522 ,  H01L21/50 ,  H04L25/02 ,  H01L23/50

Abstract: An electronic device has a substrate and first and second metallization levels with a resonant circuit. The first metallization level has a first dielectric layer on a side of the substrate, and a first metal layer on the first dielectric layer. The second metallization level has a second dielectric layer on the first dielectric layer and the first metal layer, and a second metal layer on the second dielectric layer. The electronic device includes a first plate in the first metal layer, and a second plate spaced apart from the first plate in the second metal layer to form a capacitor. The electronic device includes a winding in one of the first or second metal layers and coupled to one of the first or second plates in a resonant circuit.

公开(公告)号：US11476189B2

公开(公告)日：2022-10-18

申请号：US17120123

申请日：2020-12-12

Applicant: Texas Instruments Incorporated

Inventor： Klaas De Haan ,  Mikhail Valeryevich Ivanov ,  Tobias Bernhard Fritz ,  Swaminathan Sankaran ,  Thomas Dyer Bonifield

IPC: H01L23/522 ,  H01L23/50 ,  H04L25/02 ,  H01L21/50

Abstract: An electronic device has a substrate and first and second metallization levels with a resonant circuit. The first metallization level has a first dielectric layer on a side of the substrate, and a first metal layer on the first dielectric layer. The second metallization level has a second dielectric layer on the first dielectric layer and the first metal layer, and a second metal layer on the second dielectric layer. The electronic device includes a first plate in the first metal layer, and a second plate spaced apart from the first plate in the second metal layer to form a capacitor. The electronic device includes a winding in one of the first and second metal layers and coupled to one of the first and second plates in a resonant circuit.

公开(公告)号：US12033936B2

公开(公告)日：2024-07-09

申请号：US17963149

申请日：2022-10-10

Applicant: Texas Instruments Incorporated

Inventor： Klaas De Haan ,  Mikhail Valeryevich Ivanov ,  Tobias Bernhard Fritz ,  Swaminathan Sankaran ,  Thomas Dyer Bonifield

IPC: H01L23/522 ,  H01L21/50 ,  H01L23/50 ,  H04L25/02

CPC classification number: H01L23/5227 ,  H01L21/50 ,  H01L23/50 ,  H01L23/5222 ,  H04L25/0268

Abstract: An electronic device has a substrate and first and second metallization levels with a resonant circuit. The first metallization level has a first dielectric layer on a side of the substrate, and a first metal layer on the first dielectric layer. The second metallization level has a second dielectric layer on the first dielectric layer and the first metal layer, and a second metal layer on the second dielectric layer. The electronic device includes a first plate in the first metal layer, and a second plate spaced apart from the first plate in the second metal layer to form a capacitor. The electronic device includes a winding in one of the first or second metal layers and coupled to one of the first or second plates in a resonant circuit.

公开(公告)号：US20240274529A1

公开(公告)日：2024-08-15

申请号：US18641739

申请日：2024-04-22

Applicant: Texas Instruments Incorporated

Inventor： Klaas De Haan ,  Mikhail Valeryevich Ivanov ,  Tobias Bernhard Fritz ,  Swaminathan Sankaran ,  Thomas Dyer Bonifield

IPC: H01L23/522 ,  H01L21/50 ,  H01L23/50 ,  H04L25/02

CPC classification number: H01L23/5227 ,  H01L21/50 ,  H01L23/50 ,  H01L23/5222 ,  H04L25/0268

Abstract: An electronic device has an electronic device includes a substrate and a first dielectric layer over the substrate. The electronic device also includes a first metal layer on the first dielectric layer, the first metal layer including a first plate and a second dielectric layer over the first dielectric layer and the first metal layer. Additionally, the electronic device includes a second metal layer on the second dielectric layer. The second metal layer includes a second plate spaced apart from the first plate and a winding around the second plate.

公开(公告)号：US20220189873A1

公开(公告)日：2022-06-16

申请号：US17120123

申请日：2020-12-12

Applicant: Texas Instruments Incorporated

Inventor： Klaas De Haan ,  Mikhail Valeryevich Ivanov ,  Tobias Bernhard Fritz ,  Swaminathan Sankaran ,  Thomas Dyer Bonifield

IPC: H01L23/522 ,  H01L23/50 ,  H04L25/02 ,  H01L21/50

Abstract: An electronic device has a substrate and first and second metallization levels with a resonant circuit. The first metallization level has a first dielectric layer on a side of the substrate, and a first metal layer on the first dielectric layer. The second metallization level has a second dielectric layer on the first dielectric layer and the first metal layer, and a second metal layer on the second dielectric layer. The electronic device includes a first plate in the first metal layer, and a second plate spaced apart from the first plate in the second metal layer to form a capacitor. The electronic device includes a winding in one of the first and second metal layers and coupled to one of the first and second plates in a resonant circuit.