公开(公告)号：US20240349510A1

公开(公告)日：2024-10-17

申请号：US18479006

申请日：2023-09-30

Applicant: Texas Instruments Incorporated

Inventor： Haowen Bu ,  Roger C. McDermott ,  Matthew Richards

IPC: H10B53/30

CPC classification number: H10B53/30 ,  H01L28/40

Abstract: A method forms an integrated circuit, by forming a first conductive member affixed relative to a semiconductor substrate and a second conductive member affixed relative to the semiconductor substrate. The method also forms a ferroelectric member between the first and second conductive members. The ferroelectric member has a first portion including a first atomic ratio of lead (Pb) relative to other materials in the first portion and a second portion including a second atomic ratio of lead relative to other materials in the second portion, the second atomic ratio differing from the first atomic ratio.