公开(公告)号：US08753941B1

公开(公告)日：2014-06-17

申请号：US13766437

申请日：2013-02-13

Applicant: Texas Instruments Incorporated

Inventor： Kamel Benaissa ,  Vijay K. Reddy ,  Samuel Martin ,  T Krishnaswamy

IPC: H01L21/336

CPC classification number: H01L21/82385 ,  H01L21/26586 ,  H01L21/823814 ,  H01L27/0617 ,  H01L27/0922 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

Abstract: An integrated circuit with a LV transistor and a high performance asymmetric transistor. A power amplifier integrated circuit with a core transistor and a high performance asymmetric transistor. A method of forming an integrated circuit with a core transistor and a high performance asymmetric transistor. A method of forming a power amplifier integrated circuit with an nmos core transistor and an nmos high performance asymmetric transistor, a resistor, and an inductor.

Abstract translation: 具有LV晶体管和高性能不对称晶体管的集成电路。 一种具有核心晶体管和高性能不对称晶体管的功率放大器集成电路。 一种用核心晶体管和高性能不对称晶体管形成集成电路的方法。 一种形成具有nmos核心晶体管和nmos高性能不对称晶体管，电阻器和电感器的功率放大器集成电路的方法。