公开(公告)号：US20130302965A1

公开(公告)日：2013-11-14

申请号：US13932275

申请日：2013-07-01

Applicant: Texas Instruments Incorporated

Inventor： Scott R. SUMMERFELT ,  Byron L. WILLIAMS ,  Scott K. MONTGOMERY ,  James KLAWINSKY ,  Asad M. HAIDER

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/016 ,  H01L28/20 ,  H01L28/24 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit structure with a metal-to-metal capacitor and a metallic device such as a resistor, effuse, or local interconnect where the bottom plate of the capacitor and the metallic device are formed with the same material layers. A process for forming a metallic device along with a metal-to-metal capacitor with no additional manufacturing steps.

Abstract translation: 具有金属对金属电容器的集成电路结构和电容器，阴极或局部互连的金属器件，其中电容器的底板和金属器件形成有相同的材料层。 用于与金属对金属电容器一起形成金属器件的方法，而不需要额外的制造步骤。