公开(公告)号：US20240210625A1

公开(公告)日：2024-06-27

申请号：US18395038

申请日：2023-12-22

申请人： The Regents of the University of California

发明人： Debapam Bose ,  Jiawei Wang ,  Daniel J. Blumenthal

IPC分类号： G02B6/136

CPC分类号： G02B6/136 ,  C23C16/401

摘要： Disclosed herein is methods for fabricating ultra-low loss waveguides. One particular method may include: preparing a substrate including a lower cladding layer in a deposition chamber; flowing precursors including deuterated silane and nitrogen onto the lower cladding layer in the deposition chamber; subjecting the precursors to an inductively coupled plasma-plasma enhanced chemical vapor deposition (ICP-PECVD) process which disassociates the deuterated silane and nitrogen and deposits waveguide material of silicon nitride or silicon oxynitride onto the lower cladding layer; patterning the waveguide material into a patterned waveguide material; and depositing a top cladding layer on the patterned waveguide material, wherein the ICP-PECVD process occurs at a temperature less than or equal to 250° C. Advantageously, the ICP-PECVD process allows for deposition of low hydrogenated deposition of material layers which may allow for low temperature fabrication of ultra-low loss waveguides.