公开(公告)号：US12027488B2

公开(公告)日：2024-07-02

申请号：US17470630

申请日：2021-09-09

申请人： The Regents of the University of California ,  Georgia Tech Research Corporation ,  Wayne State University

发明人： Mike Breeden ,  Victor Wang ,  Andrew Kummel ,  Ming-Jui Li ,  Muhannad Bakir ,  Jonathan Hollin ,  Nyi Myat Khine Linn ,  Charles H. Winter

IPC分类号： H01L23/00

CPC分类号： H01L24/82 ,  H01L24/24 ,  H01L2224/24145 ,  H01L2224/24225 ,  H01L2224/245 ,  H01L2224/2511 ,  H01L2224/82108 ,  H01L2924/01027 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01074

摘要： Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.

公开(公告)号：US20220077104A1

公开(公告)日：2022-03-10

申请号：US17470630

申请日：2021-09-09

申请人： The Regents of the University of California ,  Georgia Tech Research Corporation ,  Wayne State University

发明人： Mike Breeden ,  Victor Wang ,  Andrew Kummel ,  Ming-Jui Li ,  Muhannad Bakir ,  Jonathan Hollin ,  Nyi Myat Khine Linn ,  Charles H. Winter

IPC分类号： H01L23/00

摘要： Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.

公开(公告)号：US20240347502A1

公开(公告)日：2024-10-17

申请号：US18755249

申请日：2024-06-26

申请人： The Regents of the University of California ,  Georgia Tech Research Corporation ,  Wayne State University

发明人： Mike Breeden ,  Victor Wang ,  Andrew Kummel ,  Ming-Jui Li ,  Muhannad Bakir ,  Jonathan Hollin ,  Nyi Myat Khine Linn ,  Charles H. Winter

IPC分类号： H01L23/00

CPC分类号： H01L24/82 ,  H01L24/24 ,  H01L2224/24145 ,  H01L2224/24225 ,  H01L2224/245 ,  H01L2224/2511 ,  H01L2224/82108 ,  H01L2924/01027 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01074

摘要： Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.