专利检索 ap:("The Research Foundation for The State University of New York") AND inv:"Sundar Isukapati" 第 1 页

1.

发明公开
FIELD EFFECT TRANSISTOR 审中-公开

公开(公告)号：US20240304690A1

公开(公告)日：2024-09-12

申请号：US18600700

申请日：2024-03-09

申请人： The Research Foundation for The State University of New York

发明人： Woongje SUNG , Sundar Isukapati

IPC分类号： H01L29/417 , H01L27/092 , H01L29/16

CPC分类号： H01L29/41783 , H01L27/092 , H01L29/1608

摘要： Embodiments herein include a substrate; a semiconductor layer formed over the substrate; a source formed in the semiconductor layer; a drain formed in the semiconductor layer, whereon the drain is disposed laterally relative to the source; and a gate.