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公开(公告)号:US10276740B1
公开(公告)日:2019-04-30
申请号:US15925187
申请日:2018-03-19
发明人: Rajani Ayachitula , Kimberly D. de La Harpe , Daniel E. Weisz , John M. Testerman , William J. Mandeville , Randall J. Knize , Brian M. Patterson
IPC分类号: H01L31/18 , H01L31/0288 , C23C14/24 , C23C14/14 , H01L21/02
摘要: A method for forming a photon absorbing layer. A substrate having a target surface is introduced into a controllable environment, and the pressure within the controllable environment is reduced. A first flux of a semiconductor material and a second flux of a dopant are simultaneously directed toward the target surface for a period of time, thereby producing a thickness of a substantially amorphous layer of the semiconductor material and dopant on the target surface. The semiconductor layer is laser annealed to convert it to a substantially multi-crystalline layer.