Full rail drive enhancement to differential SEU hardening circuit
    1.
    发明授权
    Full rail drive enhancement to differential SEU hardening circuit 有权
    全轨驱动增强差分SEU硬化电路

    公开(公告)号:US06608512B2

    公开(公告)日:2003-08-19

    申请号:US10034808

    申请日:2001-12-28

    IPC分类号: H03K3037

    CPC分类号: G11C11/4125

    摘要: A hardening circuit is provided for an integrated circuit which includes a data state reinforcing feedback path having a data node Q and a data complement node QN. A first hardening transistor is coupled between a rail and the data node Q, and a second hardening transistor coupled between the rail and the data complement node QN. The first and second hardening transistors provide additional drive to the data node Q and the data complement node QN. Gate controls operate the first and second hardening transistors and provide full rail drive to SEU sensitive nodes.

    摘要翻译: 提供一种用于集成电路的硬化电路,其包括具有数据节点Q和数据补码节点QN的数据状态加强反馈路径。 第一固化晶体管耦合在轨道和数据节点Q之间,以及耦合在轨道和数据补码节点QN之间的第二硬化晶体管。 第一和第二硬化晶体管为数据节点Q和数据补码节点QN提供额外的驱动。 门控制操作第一和第二硬化晶体管,并为SEU敏感节点提供完整的轨道驱动。