公开(公告)号：US20050170306A1

公开(公告)日：2005-08-04

申请号：US11038357

申请日：2005-01-18

申请人： Theodorus Maria Oosterlaken ,  Frank Huussen ,  Herbert Terhorst ,  Jack Van Putten

发明人： Theodorus Maria Oosterlaken ,  Frank Huussen ,  Herbert Terhorst ,  Jack Van Putten

IPC分类号： H01L21/31 ,  B08B5/00 ,  B08B7/00 ,  G01M3/04 ,  H01L21/00

CPC分类号： H01L21/67126

摘要： A semiconductor processing reactor comprises a reaction chamber with a gas exhaust and a mechanical seal at one end of the chamber. The seal seals off the chamber from the ambient environment and is purged with gas to prevent diffusion of ambient gases into the reaction chamber. Because the purge gas can diffuse through the seal into the reaction chamber, the purge gas is chosen based upon the process gas and the location of the seal and exhaust so that the molecular weight of the purge gas causes the purge gas, by the force of gravity or buoyancy, to remain in the portion of the reaction chamber containing the seal and the gas exhaust. Advantageously, keeping the purge gas at the same end of the chamber as the gas exhaust minimizes dilution of the process gas with the purge gas, thereby preventing the purge gas from detrimentally effecting process results.

摘要翻译： 半导体处理反应器包括在室的一端具有排气和机械密封的反应室。 密封件将室从周围环境密封并用气体吹扫，以防止环境气体扩散进入反应室。 因为吹扫气体可以通过密封件扩散到反应室中，所以基于处理气体和密封件和排气的位置来选择吹扫气体，使得吹扫气体的分子量由吹扫气体的分力引起， 重力或浮力，保留在包含密封件和排气的反应室的部分。 有利地，将吹扫气体保持在与气体排出物相同的端部处，使得处理气体与吹扫气体的稀释最小化，从而防止吹扫气体不利地影响过程结果。