公开(公告)号：US20110281412A1

公开(公告)日：2011-11-17

申请号：US13190125

申请日：2011-07-25

申请人： Thomas ERNST ,  Christian ISHEDEN

发明人： Thomas ERNST ,  Christian ISHEDEN

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66772

摘要： A method for fabricating a microelectronic device comprising: a support, an etched stack of thin layers comprising: at least one first block and at least one second block resting on the support, in which at least one drain region and at least one source region, respectively, are capable of being formed, several semiconductor bars connecting a first zone of the first block and another zone of the second block, and able to form a multi-branch transistor channel, or several transistor channels, the device also comprising: a gate surrounding said bars and located between said first block and said second block, the gate being in contact with a first and a second insulating spacer in contact with at least one sidewall of the first block and with at least one sidewall of the second block, respectively, and at least partially separated from the first block and the second block, via said insulating spacers.

摘要翻译： 一种用于制造微电子器件的方法，包括：支撑体，蚀刻的薄层叠层，包括：至少一个第一块和搁置在所述支撑上的至少一个第二块，其中至少一个漏极区和至少一个源极区， 能够形成多个半导体条，连接第一块的第一区和第二块的另一区，并且能够形成多分支晶体管沟道或多个晶体管沟道，该器件还包括：栅极 围绕所述杆并且位于所述第一块和所述第二块之间，所述栅极与分别与所述第一块的至少一个侧壁和所述第二块的至少一个侧壁接触的第一和第二绝缘间隔件接触; 并且经由所述绝缘间隔件至少部分地与第一块和第二块分离。