公开(公告)号：US5667922A

公开(公告)日：1997-09-16

申请号：US639340

申请日：1996-04-26

申请人： Thomas J. Martiska ,  Stephen Darling

发明人： Thomas J. Martiska ,  Stephen Darling

IPC分类号： G03F7/16 ,  G03F7/00

CPC分类号： G03F7/168

摘要： A method of fabricating a patterned polyimide film on a semiconductor wafer including spin coating the wafer with a polyimide precursor solution, baking the polyimide precursor solution in order to remove solvents from and to slightly cure the solution to form a polyimide film, and rinsing the polyimide film with deionized water immediately following the baking step prior to further processing. The rinsing in part serves to further remove solvents associated with the polyimide film. The process continues with photolithography techniques in which the wafer spin coated with a selected photoresist to form a photoresist film immediately following the rinsing step, and a baking of the photoresist film. Thereafter, the photoresist film is exposed to radiation through a photomask, and developed with a solution to form a pattern. The pattern is then etched into the polyimide film with the solution. The remaining portions of the photoresist are removed with a chemical stripper. The wafer is then baked to fully cure the pattern formed in the polyimide film. The present invention provides an improved semiconductor fabrication process which yields better defined patterns and greatly enhances the uniformity and repeatability of the photolithographic process.

摘要翻译： 一种在半导体晶片上制造图案化聚酰亚胺膜的方法，其包括用聚酰亚胺前体溶液旋涂晶片，烘烤聚酰亚胺前体溶液以从溶液中除去溶剂并稍微固化以形成聚酰亚胺膜，并将聚酰亚胺 在进一步处理之前，立即用去离子水在烘烤步骤之后涂上薄膜。 冲洗部分用于进一步除去与聚酰亚胺膜相关的溶剂。 该工艺继续进行光刻技术，其中晶片旋转涂覆有选定的光致抗蚀剂以在冲洗步骤之后立即形成光致抗蚀剂膜，并烘烤光致抗蚀剂膜。 此后，通过光掩模将光致抗蚀剂膜暴露于辐射，并用溶液显影以形成图案。 然后用溶液将图案刻蚀成聚酰亚胺膜。 光致抗蚀剂的剩余部分用化学剥离剂除去。 然后烘烤晶片以完全固化形成在聚酰亚胺膜中的图案。 本发明提供了改进的半导体制造工艺，其产生更好的限定图案并大大增强了光刻工艺的均匀性和重复性。