公开(公告)号：US5494860A

公开(公告)日：1996-02-27

申请号：US404080

申请日：1995-03-14

申请人： Thomas L. McDevitt ,  Scott L. Pennington ,  Michael A. Smey

发明人： Thomas L. McDevitt ,  Scott L. Pennington ,  Michael A. Smey

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/28512 ,  H01L21/76838 ,  Y10S438/909

摘要： A process for decreasing the electrical resistance of a circuit element containing titanium metal, in applications requiring annealing in hydrogen, is disclosed. The process requires, prior to exposure to hydrogen, heating the titanium-containing circuit element in an inert, hydrogen-free atmosphere. The process thus involves a first step of annealing the titanium-containing circuit element in an inert, hydrogen-free atmosphere, such as nitrogen or other inert gas, at 300.degree. C. to 400.degree. C. for 10 to 60 minutes, followed by a second step of annealing in a hydrogen-containing atmosphere, such as hydrogen gas or forming gas, at 350.degree. C. to 450.degree. C. for at least 20 minutes. The resulting structures have both low resistance and tight variability.

摘要翻译： 公开了一种在需要在氢气中进行退火的应用中降低含有钛金属的电路元件的电阻的方法。 该方法在暴露于氢之前需要在惰性，无氢气氛中加热含钛电路元件。 因此，该方法涉及在惰性，无氢气氛（例如氮气或其它惰性气体）中在300℃至400℃下将含钛电路元件退火10至60分钟的第一步骤，随后是 在含氢气氛如氢气或成形气体中在350℃至450℃退火至少20分钟的第二步。 所得结构具有低电阻和紧密变异性。