Thin-film device
    1.
    发明授权

    公开(公告)号:US11380798B2

    公开(公告)日:2022-07-05

    申请号:US16899665

    申请日:2020-06-12

    摘要: A thin-film device includes a polysilicon element and an oxide semiconductor element. The polysilicon element includes a first part made of low-resistive polysilicon. The oxide semiconductor element includes a second part made of low-resistive oxide semiconductor. The first part and the second part are disposed to overlap each other and connected.