公开(公告)号：US20190115430A1

公开(公告)日：2019-04-18

申请号：US16089421

申请日：2017-03-30

Applicant: Tohoku University

Inventor： Kunihiro Tsubomi ,  Tetsuo Endoh ,  Masakazu Muraguchi

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L21/76

Abstract: Provided is a semiconductor device. A semiconductor device includes a substrate, a buffer layer provided on the substrate, a semiconductor layer provided on the buffer layer, a body region provided at a part of a surface layer of the semiconductor layer, a source region provided at a part of a surface layer of the body region, a drain region provided at a part of the surface layer of the semiconductor layer outside the body region, a gate insulating layer provided to extend from the surface layer of the body region to a predetermined depth, a gate electrode provided on the gate insulating layer, a source electrode provided on the source region, a drain electrode provided on the drain region, and an isolation region provided to extend from the surface layer of the semiconductor layer to above the predetermined depth.

公开(公告)号：US11152468B2

公开(公告)日：2021-10-19

申请号：US16089421

申请日：2017-03-30

Applicant: Tohoku University

Inventor： Kunihiro Tsubomi ,  Tetsuo Endoh ,  Masakazu Muraguchi

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L21/76 ,  H01L29/06

Abstract: Provided is a semiconductor device. A semiconductor device includes a substrate, a buffer layer provided on the substrate, a semiconductor layer provided on the buffer layer, a body region provided at a part of a surface layer of the semiconductor layer, a source region provided at a part of a surface layer of the body region, a drain region provided at a part of the surface layer of the semiconductor layer outside the body region, a gate insulating layer provided to extend from the surface layer of the body region to a predetermined depth, a gate electrode provided on the gate insulating layer, a source electrode provided on the source region, a drain electrode provided on the drain region, and an isolation region provided to extend from the surface layer of the semiconductor layer to above the predetermined depth.