公开(公告)号：US20230030762A1

公开(公告)日：2023-02-02

申请号：US17812523

申请日：2022-07-14

Applicant: Tokyo Electron Limited

Inventor： Kensuke HIGUCHI ,  Asaka FUJIKAWA ,  Tsuyoshi TAKAHASHI

IPC: H01L27/108 ,  C23C16/34 ,  C23C16/455 ,  C23C16/02

Abstract: A method of forming a titanium nitride film on a substrate. The method includes: performing treatment of changing hydrophilicity of a base film formed on a substrate including a surface on which the base film capable of having its hydrophilicity changed is formed; and forming a titanium nitride film by vapor phase growth on a top surface of the base film subjected to the treatment of changing the hydrophilicity.

公开(公告)号：US20220356565A1

公开(公告)日：2022-11-10

申请号：US17661577

申请日：2022-05-02

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi TAKAHASHI ,  Seokhyoung HONG ,  Kensuke HIGUCHI

IPC: C23C16/34 ,  H01L21/285 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a titanium nitride film includes: forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reacts with the titanium compound to form titanium nitride, to the substrate, wherein the forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7 kPa to 12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 micro-ohm-cm or less.