公开(公告)号：US12240012B2

公开(公告)日：2025-03-04

申请号：US18150818

申请日：2023-01-06

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Kodai Yagi ,  Yuki Matsutake

IPC: B05D3/04 ,  H01L21/02 ,  H01L21/027

Abstract: A coating film forming method includes coating a coating liquid by supplying the same to a front surface of a substrate and rotating the substrate to form a coating film, supplying a high-temperature gas having a temperature higher than the substrate to an exposed region of a rear surface of the substrate, adjusting film thickness distribution of the coating film in a plane of the substrate by rotating the substrate at a first rotation speed, and drying, after the adjusting the film thickness distribution, the coating film by adjusting the film thickness of the coating film in an entire plane of the substrate by rotating the substrate at a second rotation speed different from the first rotation speed. A period in which the drying of the coating film is performed includes a period in which the supplying of the high-temperature gas to the substrate is stopped.