-
公开(公告)号：US20210142983A1
公开(公告)日：2021-05-13
申请号：US17086622
申请日：2020-11-02
Applicant: Tokyo Electron Limited
Inventor： Shintaro IKEDA , Hidetoshi HANAOKA , Naoki TAMARU
Abstract: There is provision of a plasma processing apparatus including a processing vessel, a first member provided in the processing vessel, and a second member provided outside the first member. In at least one of the first member and the second member, a gas flow passage is formed, and the gas flow passage is configured to cause a gas to flow into a gap between the first member and the second member.
Search Results
1
records
(took 0.01 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
