公开(公告)号：US20210043434A1

公开(公告)日：2021-02-11

申请号：US16939076

申请日：2020-07-27

Applicant: Tokyo Electron Limited

Inventor： Toshimasa KOBAYASHI ,  Kazuki TAKAHASHI

IPC: H01J37/32 ,  B01D53/04

Abstract: A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.

公开(公告)号：US20230386804A1

公开(公告)日：2023-11-30

申请号：US18232834

申请日：2023-08-11

Applicant: Tokyo Electron Limited

Inventor： Toshimasa KOBAYASHI ,  Kazuki TAKAHASHI

IPC: H01J37/32 ,  B01D53/04

CPC classification number: H01J37/32844 ,  H01J37/3244 ,  B01D53/0407 ,  H01J37/32229 ,  H01J37/32871 ,  B01D2253/34 ,  H01J37/32311

Abstract: A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.