公开(公告)号：US20220013404A1

公开(公告)日：2022-01-13

申请号：US17448608

申请日：2021-09-23

Applicant: Tokyo Electron Limited

Inventor： Kazuo KIBI ,  Toshitake TSUDA ,  Kenji SUZUKI

IPC: H01L21/768 ,  H01L27/108

Abstract: A method for example manufacturing a semiconductor device, which includes: forming a hole in a region of an insulating film laminated on a substrate; embedding a first conductive material in the hole to a position lower than a height of a sidewall of the hole; further embedding a second conductive material through a selective growth in the hole in which the first conductive material has been embedded; and etching the second conductive material to form a contact pad at a position above the hole.