公开(公告)号：US20210082675A1

公开(公告)日：2021-03-18

申请号：US17015170

申请日：2020-09-09

Applicant: Tokyo Electron Limited

Inventor： Kazunaga ONO ,  Atsushi GOMI ,  Tatsuo HATANO ,  Yasuhiro OTAGIRI ,  Tomoyuki FUJIHARA ,  Yuuki MOTOMURA

IPC: H01J37/34 ,  C23C14/34 ,  H01L21/203

Abstract: A sputtering method including: performing a pre-sputtering by emitting sputter particles from a target provided in a sputtering apparatus in a state where the target is shielded by a shielding portion of a shutter provided closed to the target to be capable of opening/closing the target; and, after the pre-sputtering, performing a main-sputtering by emitting the sputter particles from the target in a state where an opening of the shutter is aligned with the target thereby depositing the sputter particles on a substrate. When the pre-sputtering and the main-sputtering are repeatedly performed, a shutter position is changed during the pre-sputtering so as to change a position of the shielding portion aligned with the target.