公开(公告)号：US20160198559A1

公开(公告)日：2016-07-07

申请号：US15069385

申请日：2016-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt FUNK ,  Zhiying CHEN

IPC: H05H3/02

CPC classification number: H05H3/02

Abstract: Embodiments include a chemical processing apparatus and method of using the chemical processing apparatus to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process which is comprised of a substantially anisotropic beam of neutral particles. The chemical processing apparatus comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing apparatus comprises an ungrounded dielectric (insulator) neutralizer grid configured to expose a substrate in the second plasma chamber to the substantially anisotropic beam of neutral particles traveling from the neutralizer grid.

Abstract translation: 实施方案包括化学处理装置和使用化学处理装置用基本上各向异性的中性粒子束组成的单能空间电荷中和的中性束活化化学工艺处理衬底的方法。 化学处理装置包括用于形成第一等离子体电位的第一等离子体的第一等离子体室和用于在大于第一等离子体电位的第二等离子体电位下形成第二等离子体的第二等离子体室，其中使用电子 来自第一等离子体的通量。 此外，化学处理装置包括未被接地的电介质（绝缘体）中和器栅格，其被配置为将第二等离子体室中的衬底暴露于从中和器栅格行进的基本上各向异性的中性粒子束。