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公开(公告)号：US20070215951A1
公开(公告)日：2007-09-20
申请号：US11750916
申请日：2007-05-18
IPC分类号： H01L29/94
CPC分类号： H01L21/28097 , H01L21/823418 , H01L21/823443 , H01L21/823814 , H01L21/823835 , H01L29/4975 , H01L29/6659 , H01L29/7833
摘要： The invention relates to a method for fabricating a semiconductor device having a semiconductor body that comprises a first semiconductor structure having a dielectric layer and a first conductor, and a second semiconductor structure having a dielectric layer and a second conductor, that part of the first conductor which adjoins the dielectric layer having a work function different from the work function of the corresponding part of the second conductor. In one embodiment of the invention, after the dielectric layer has been applied to the semiconductor body, a metal layer is applied to the said dielectric layer, and then a silicon layer is deposited on the metal layer and is brought into reaction with the metal layer at the location of the first semiconductor structure, forming a metal silicide. In one embodiment, those parts of the conductors which have different work functions are formed by etching a layer other than the silicon layer, in particular a metal layer, at the location of one of the two semiconductor structures. Furthermore, a further metal layer is applied over the silicon layer and is used to form a further metal silicide at the location of the second transistor. One embodiment of the invention is particularly suitable for use in CMOS technology and results in both PMOS and NMOS transistors with favourable properties.
摘要翻译： 本发明涉及一种半导体器件的制造方法，该半导体器件具有包括具有电介质层和第一导体的第一半导体结构的半导体本体，以及具有电介质层和第二导体的第二半导体结构，该第一导体 其与介电层邻接，其功函数不同于第二导体的相应部分的功函数。 在本发明的一个实施例中，在将介电层施加到半导体本体之后，将金属层施加到所述介电层上，然后在该金属层上沉积硅层并与金属层反应 在第一半导体结构的位置处形成金属硅化物。 在一个实施例中，通过在两个半导体结构之一的位置处蚀刻除了硅层以外的层，特别是金属层，形成具有不同功函数的导体的这些部分。 此外，在硅层上施加另外的金属层，并且用于在第二晶体管的位置形成另外的金属硅化物。 本发明的一个实施例特别适用于CMOS技术，并且导致具有良好特性的PMOS和NMOS晶体管。
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