公开(公告)号：US20080225576A1

公开(公告)日：2008-09-18

申请号：US11724435

申请日：2007-03-15

申请人： Tom Zhong ,  Terry Kin Ting Ko ,  Chyu-Jiuh Torng ,  Wai-Ming Kan ,  Adam Zhong

发明人： Tom Zhong ,  Terry Kin Ting Ko ,  Chyu-Jiuh Torng ,  Wai-Ming Kan ,  Adam Zhong

IPC分类号： G11C11/00

CPC分类号： H01L27/222 ,  H01L43/12 ,  Y10S977/935

摘要： An MTJ pattern layout for a memory device is disclosed that includes two CMP assist features outside active MTJ device blocks. A first plurality of dummy MTJ devices is located in two dummy bands formed around an active MTJ device block. The inner dummy band is separated from the outer dummy band by the MTJ ILD layer and has a MTJ device density essentially the same as the MTJ device block. The outer dummy band has a MTJ device density at least 10% greater than the inner dummy band. The inner dummy band serves to minimize CMP edge effect in the MTJ device block while the outer dummy band improves planarization. A second plurality of dummy MTJ devices is employed in contact pads outside the outer dummy band and is formed between a WL ILD layer and a BIT ILD layer thereby minimizing delamination of the MTJ ILD layer.

摘要翻译： 公开了一种用于存储器件的MTJ图案布局，其包括主动MTJ器件块之外的两个CMP辅助特征。 第一组多个虚拟MTJ设备位于形成在活动MTJ设备块周围的两个虚拟带中。 内部虚拟带通过MTJ ILD层与外部虚拟带分离，并且具有与MTJ器件块基本相同的MTJ器件密度。 外虚拟带具有比内虚拟带大至少10％的MTJ装置密度。 内部虚拟带用于最小化MTJ器件块中的CMP边缘效应，而外部虚拟带改善了平坦化。 在外虚拟带外部的接触焊盘中采用第二多个虚拟MTJ器件，并且形成在WL ILD层和BIT ILD层之间，从而最小化MTJ ILD层的分层。

公开(公告)号：US07508700B2

公开(公告)日：2009-03-24

申请号：US11724435

申请日：2007-03-15

申请人： Tom Zhong ,  Terry Kin Ting Ko ,  Chyu-Jiuh Torng ,  Wai-Ming Kan ,  Adam Zhong

发明人： Tom Zhong ,  Terry Kin Ting Ko ,  Chyu-Jiuh Torng ,  Wai-Ming Kan ,  Adam Zhong

IPC分类号： G11C11/00

CPC分类号： H01L27/222 ,  H01L43/12 ,  Y10S977/935

摘要： An MTJ pattern layout for a memory device is disclosed that includes two CMP assist features outside active MTJ device blocks. A first plurality of dummy MTJ devices is located in two dummy bands formed around an active MTJ device block. The inner dummy band is separated from the outer dummy band by the MTJ ILD layer and has a MTJ device density essentially the same as the MTJ device block. The outer dummy band has a MTJ device density at least 10% greater than the inner dummy band. The inner dummy band serves to minimize CMP edge effect in the MTJ device block while the outer dummy band improves planarization. A second plurality of dummy MTJ devices is employed in contact pads outside the outer dummy band and is formed between a WL ILD layer and a BIT ILD layer thereby minimizing delamination of the MTJ ILD layer.

摘要翻译： 公开了一种用于存储器件的MTJ图案布局，其包括主动MTJ器件块之外的两个CMP辅助特征。 第一组多个虚拟MTJ设备位于形成在活动MTJ设备块周围的两个虚拟带中。 内部虚拟带通过MTJ ILD层与外部虚拟带分离，并且具有与MTJ器件块基本相同的MTJ器件密度。 外虚拟带具有比内虚拟带大至少10％的MTJ装置密度。 内部虚拟带用于最小化MTJ器件块中的CMP边缘效应，而外部虚拟带改善了平坦化。 在外虚拟带外部的接触焊盘中采用第二多个虚拟MTJ器件，并且形成在WL ILD层和BIT ILD层之间，从而最小化MTJ ILD层的分层。

公开(公告)号：US08105948B2

公开(公告)日：2012-01-31

申请号：US12070286

申请日：2008-02-14

申请人： Adam Zhong ,  Wai-Ming Kan ,  Tom Zhong ,  Chyu-Jiuh Torng

发明人： Adam Zhong ,  Wai-Ming Kan ,  Tom Zhong ,  Chyu-Jiuh Torng

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  H01L43/12

摘要： A process is described for making contact to the buried capping layers of GMR and MTJ devices without the need to form and fill via holes. CMP is applied to the structure in three steps: (1) conventional CMP (2) a Highly Selective Slurry (HSS) is substituted for the conventional slurry to just expose the capping layer, and (3) the HSS is diluted and used to clean the surface as well as to cause a slight protrusion of the capping layers above the surrounding dielectric surface, making it easier the contact them without damaging the devices below.

摘要翻译： 描述了与GMR和MTJ装置的掩埋覆盖层接触而不需要形成和填充通孔的方法。 CMP结构分为三个步骤：（1）常规CMP（2）采用高选择性浆料（HSS）代替传统的浆料，仅暴露顶盖层，（3）将HSS稀释并用于清洗 表面以及使覆盖层在周围的电介质表面上稍微突出，使得更容易接触它们而不损坏下面的器件。

公开(公告)号：US20090209102A1

公开(公告)日：2009-08-20

申请号：US12070286

申请日：2008-02-14

申请人： Adam Zhong ,  Wai-Ming Kan ,  Tom Zhong ,  Chyu-Jiuh Torng

发明人： Adam Zhong ,  Wai-Ming Kan ,  Tom Zhong ,  Chyu-Jiuh Torng

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  H01L43/12

摘要： A process is described for making contact to the buried capping layers of GMR and MTJ devices without the need to form and fill via holes. CMP is applied to the structure in three steps: (1) conventional CMP (2) a Highly Selective Slurry (HSS) is substituted for the conventional slurry to just expose the capping layer, and (3) the HSS is diluted and used to clean the surface as well as to cause a slight protrusion of the capping layers above the surrounding dielectric surface, making it easier the contact them without damaging the devices below.

摘要翻译： 描述了与GMR和MTJ装置的掩埋覆盖层接触而不需要形成和填充通孔的方法。 CMP结构分为三个步骤：（1）常规CMP（2）采用高选择性浆料（HSS）代替传统的浆料，仅暴露顶盖层，（3）将HSS稀释并用于清洗 表面以及使覆盖层在周围的电介质表面上稍微突出，使得更容易接触它们而不损坏下面的器件。