Magnetron plasma processing apparatus
    1.
    发明授权
    Magnetron plasma processing apparatus 有权
    磁控管等离子体处理装置

    公开(公告)号:US06764575B1

    公开(公告)日:2004-07-20

    申请号:US10069512

    申请日:2002-03-04

    IPC分类号: C23C1434

    CPC分类号: H01J37/3266 H01J37/3408

    摘要: When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A magnetic field gradient, wherein the magnetic field strength decreases from the E pole side toward the W pole side in a direction perpendicular to a magnetic field direction B, is formed in a plane perpendicular to the direction of an electric field between a pair of electrodes separated from each other. The anisotropic segment magnets have a first section a including anisotropic segment magnets arranged in the vicinity of a region A located outside an E pole side end of the process substrate with an N pole thereof being directed toward this region, and a second portion b including anisotropic segment magnets arranged with an S pole thereof being directed toward this region, to locally increase the magnetic field strengths of the first and second regions.

    摘要翻译: 当对基板30进行磁控管等离子体处理时,设置偶极环磁体21,其中大量的各向异性磁体22围绕室1的外壁排列成环状。 其磁场强度在与磁场方向B垂直的方向从E极侧朝向W极侧的磁场强度形成在与分离的一对电极之间的电场方向垂直的面内 从彼此。 各向异性区段磁体具有第一区段a,其包括各向异性区段磁体,其布置在位于处理衬底的E极侧端外侧的区域A的附近,其N极指向该区域,第二部分b包括各向异性 将其S极布置的段磁体指向该区域,以局部地增加第一和第二区域的磁场强度。