公开(公告)号：US08293653B2

公开(公告)日：2012-10-23

申请号：US12656981

申请日：2010-02-22

申请人： Tomoo Nakayama ,  Yoshiko Kasama ,  Eiichi Fujikura ,  Atsushi Kikuchi

发明人： Tomoo Nakayama ,  Yoshiko Kasama ,  Eiichi Fujikura ,  Atsushi Kikuchi

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/28518 ,  H01L21/76814

摘要： A method of manufacturing a semiconductor device includes a process of removing, by dry etching, an insulating layer which is formed on the top surface of a Ni-containing silicide layer to thereby at least partially expose the Ni-containing silicide layer; and a process of cleaning the exposed portion of the Ni-containing silicide layer using reduced water having a reductive function.

摘要翻译： 制造半导体器件的方法包括通过干蚀刻除去形成在含Ni硅化物层的顶表面上的绝缘层从而至少部分地暴露含Ni硅化物层的工艺; 以及使用具有还原功能的还原水清洗含Ni硅化物层的暴露部分的工艺。

公开(公告)号：US20100221912A1

公开(公告)日：2010-09-02

申请号：US12656981

申请日：2010-02-22

申请人： Tomoo Nakayama ,  Yoshiko Kasama ,  Eiichi Fujikura ,  Atsushi Kikuchi

发明人： Tomoo Nakayama ,  Yoshiko Kasama ,  Eiichi Fujikura ,  Atsushi Kikuchi

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L21/02063 ,  H01L21/28518 ,  H01L21/76814

摘要： A method of manufacturing a semiconductor device includes a process of removing, by dry etching, an insulating layer which is formed on the top surface of a Ni-containing silicide layer to thereby at least partially expose the Ni-containing silicide layer; and a process of cleaning the exposed portion of the Ni-containing silicide layer using reduced water having a reductive function.

摘要翻译： 制造半导体器件的方法包括通过干蚀刻除去形成在含Ni硅化物层的顶表面上的绝缘层从而至少部分地暴露含Ni硅化物层的工艺; 以及使用具有还原功能的还原水清洗含Ni硅化物层的暴露部分的工艺。