公开(公告)号：US20220231259A1

公开(公告)日：2022-07-21

申请号：US17713765

申请日：2022-04-05

Applicant: Toppan Inc.

Inventor： Mitsuru KANO

IPC: H01L51/52 ,  C23C16/455 ,  H01L51/00 ,  H01L51/56

Abstract: An atomic layer deposition apparatus for forming an atomic layer on a flexible substrate, the apparatus including an unwinding chamber having an unwinding roll for unwinding the flexible substrate, a winding chamber having a winding roll for winding the flexible substrate on which the atomic layer is formed, a plurality of reaction chambers provided between the unwinding chamber and the winding chamber so that the flexible substrate can pass therethrough, a first supply part for storing a gas containing a first precursor, a first supply pipe connected to the first supply part, a second supply part for storing a purge gas, a second supply pipe connected to the second supply part, a third supply part for storing a gas containing a second precursor, a third supply pipe connected to the third supply part, and an exhaust pipe connected to the plurality of reaction chambers.