专利检索 ap:("Toshihiro Tanaka" OR "Hiroyuki Tanikawa" OR "Masayoshi Nakano" OR "Norio Oza" OR "Koki Watanabe" OR "Yutaka Shinagawa") AND inv:"Norio Oza" 第 1 页

1.

发明授权
Non-volatile memory device with plurality of threshold voltage distributions 失效

公开(公告)号：US06519184B2

公开(公告)日：2003-02-11

申请号：US10082335

申请日：2002-02-26

申请人： Toshihiro Tanaka , Hiroyuki Tanikawa , Masayoshi Nakano , Norio Oza , Koki Watanabe , Yutaka Shinagawa

发明人： Toshihiro Tanaka , Hiroyuki Tanikawa , Masayoshi Nakano , Norio Oza , Koki Watanabe , Yutaka Shinagawa

IPC分类号： G11C1606

CPC分类号： G11C16/344 , G11C16/3468

摘要： In a verify operation after a write or erase to check whether a memory cell threshold voltage is contained in a predetermined threshold voltage distribution, verify voltage is changed in three stages or more in a direction to mitigate the decision condition. This prevents non-convergence of write and erase operation and can complete the write or erase in a short time.