Plasma Processing System And Apparatus And A Sample Processing Method
    1.
    发明申请
    Plasma Processing System And Apparatus And A Sample Processing Method 有权
    等离子体处理系统及装置及样品处理方法

    公开(公告)号:US20080011422A1

    公开(公告)日:2008-01-17

    申请号:US11780014

    申请日:2007-07-19

    IPC分类号: H05H1/00

    摘要: A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

    摘要翻译: 等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器,以及构成室的天花板的基本均匀的厚度和电功率的板。 该板与样品台相对设置并基本上平行,以覆盖舞台安装表面的整个区域并且在其中具有通孔。 直径大于通孔直径的光发射器设置在真空容器的内部,并且具有位于板的后表面上方且间隔很小距离的位置处的端面,以便接收来自腔室的光 通过通孔。 光发射器相对于板的后表面独立地可拆卸。