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    Method of manufacturing semiconductor device
    9.
    发明授权
    Method of manufacturing semiconductor device 有权

    公开(公告)号：US08642464B2

    公开(公告)日：2014-02-04

    申请号：US13562818

    申请日：2012-07-31

    申请人： Takeshi Kagawa

    发明人： Takeshi Kagawa

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76895 ,  H01L21/76897 ,  H01L27/0207

    摘要： A method of manufacturing a semiconductor device includes forming a first interconnection and a second interconnection above a semiconductor substrate, forming a first sidewall insulating film on a side wall of the first interconnection, and a second sidewall insulating film on a side wall of the second interconnection, forming a conductive film above the semiconductor substrate with the first interconnection, the first sidewall insulating film, the second interconnection and the second sidewall insulating film formed on, and selectively removing the conductive film above the first interconnection and the second interconnection to form in a region between the first interconnection and the second interconnection a third interconnection formed of the conductive film and spaced from the first interconnection and the second interconnection by the first sidewall insulating film and the second sidewall insulating film.