公开(公告)号：US20040214413A1

公开(公告)日：2004-10-28

申请号：US10829382

申请日：2004-04-22

申请人： Trecenti Technologies, Inc.

发明人： Tomoyasu Nakamine ,  Kenichi Yamaguchi ,  Kenichi Satoh

IPC分类号： H01L021/20

CPC分类号： C23C16/4405 ,  C23C16/4404

摘要： By-products inside a furnace body of a CVD film forming apparatus after gas cleaning is performed in the furnace body are provided from being generated. The gas cleaning is performed in the furnace body by a plasma of a gas containing a halogen system gas and an Ar gas in an atmosphere in which the temperature of a heater disposed in the furnace body is approximately 500null C. or lower. Thereafter, a rise of the temperature of the heater is started. While the temperature of the heater is maintained constant, a film forming gas is introduced into the furnace body during a time period before the raised temperature reaches a temperature at which radicals or ions of a halogen system element are activated. Thereby, thin films are formed on the inner wall of the furnace body and the surfaces of members including the heater in the furnace body

摘要翻译： 在炉体中进行气体净化后的CVD成膜装置的炉体内的副产物被生成。 通过在炉体内配置的加热器的温度为约500℃以下的气氛中，通过含有卤素体系气体和Ar气体的气体的等离子体在炉体中进行气体清洗。 此后，开始加热器的温度升高。 在加热器的温度保持恒定的同时，在升高的温度达到卤素系元素的自由基或离子被激活的温度之前的时间段内，将成膜气体引入炉体。 由此，在炉体的内壁和炉体内具有加热器的部件的表面形成有薄膜