Interdigitated capacitor structure for an integrated circuit
    1.
    发明授权
    Interdigitated capacitor structure for an integrated circuit 有权
    用于集成电路的交叉电容器结构

    公开(公告)号:US06819542B2

    公开(公告)日:2004-11-16

    申请号:US10379121

    申请日:2003-03-04

    IPC分类号: H01G4012

    摘要: A capacitor has at least two layers of substantially parallel interdigitated strips. The strips of each layer are alternately connected to a first and a second bus. The first and second buses of each layer are interconnected to first and second buses of an adjacent layer. The strips of each layer are approximately perpendicular to strips of an adjacent layer. The capacitor further includes dielectric material between strips of the same and different layers. A method of fabricating the capacitor includes forming at least two layers of substantially parallel interdigitated strips which are alternately connected to first and second buses of each layer. The buses of each layer are connected to the respective buses of an adjacent layer. The strips of one layer are approximately perpendicular to the strips of an adjacent layer. Dielectric material is formed between strips of the same and different layers.

    摘要翻译: 电容器具有至少两层基本上平行的叉指条。 每层的条带交替地连接到第一和第二总线。 每层的第一和第二总线与相邻层的第一和第二总线相互连接。 每层的条带大致垂直于相邻层的条带。 电容器还包括相同层和不同层的条之间的介电材料。 一种制造电容器的方法包括形成至少两层基本上平行的交叉指状的条,其交替地连接到每层的第一和第二总线。 每层的总线连接到相邻层的相应总线。 一层的条带大致垂直于相邻层的条带。 电介质材料形成在相同层和不同层的条之间。