公开(公告)号：US07498228B2

公开(公告)日：2009-03-03

申请号：US11775223

申请日：2007-07-09

申请人： Tzu-Ping Chen ,  Chien-Hung Chen ,  Pei-Chen Kuo ,  Shen-De Wang

发明人： Tzu-Ping Chen ,  Chien-Hung Chen ,  Pei-Chen Kuo ,  Shen-De Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L21/76826 ,  H01L21/76828 ,  H01L29/66833

摘要： A method for fabricating a SONOS memory is disclosed. First, a semiconductor substrate is provided and a SONOS memory cell is formed on said semiconductor substrate. A passivation layer is deposited on the SONOS memory cell and a contact pad is formed on the passivation layer. Subsequently, an ultraviolet treatment is performed and an annealing process is conducted thereafter.

摘要翻译： 公开了一种用于制造SONOS存储器的方法。 首先，提供半导体衬底，并且在所述半导体衬底上形成SONOS存储单元。 钝化层沉积在SONOS存储单元上，并且在钝化层上形成接触焊盘。 接着，进行紫外线处理，然后进行退火处理。

公开(公告)号：US20090017590A1

公开(公告)日：2009-01-15

申请号：US11775223

申请日：2007-07-09

申请人： TZU-PING CHEN ,  Chien-Hung Chen ,  Pei-Chen Kuo ,  Shen-De Wang

发明人： TZU-PING CHEN ,  Chien-Hung Chen ,  Pei-Chen Kuo ,  Shen-De Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L21/76826 ,  H01L21/76828 ,  H01L29/66833

摘要： A method for fabricating a SONOS memory is disclosed. First, a semiconductor substrate is provided and a SONOS memory cell is formed on said semiconductor substrate. A passivation layer is deposited on the SONOS memory cell and a contact pad is formed on the passivation layer. Subsequently, an ultraviolet treatment is performed and an annealing process is conducted thereafter.

摘要翻译： 公开了一种用于制造SONOS存储器的方法。 首先，提供半导体衬底，并且在所述半导体衬底上形成SONOS存储单元。 钝化层沉积在SONOS存储单元上，并且在钝化层上形成接触焊盘。 接着，进行紫外线处理，然后进行退火处理。