公开(公告)号：US20130149460A1

公开(公告)日：2013-06-13

申请号：US13713043

申请日：2012-12-13

Applicant: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I

Inventor： Collin R. Becker ,  Luke J. Currano ,  Wayne A. Churaman ,  Conrad R. Stoldt

IPC: F23Q7/22

CPC classification number: F23Q7/22

Abstract: Porous silicon (PS) films composed of pores with diameters less than 3 nm are fabricated using a galvanic etching approach that does not require an external power supply. A highly reactive, nanoenergetic composite is then created by impregnating the nanoscale pores with the strong oxidizer, sodium perchlorate (NaClO4). The combustion propagation velocity of the energetic composite is measured using microfabricated diagnostic devices in conjunction with high-speed optical imaging up to 930,000 frames per second. Combustion velocities averaging 3,050 m/s are observed for PS films with specific areas of ˜840 m2/g and porosities of about 65-67%. Galvanic etching may also be used to fabricate other porous silicon morphologies and also strong oxidizers other than NaClO4 could be used to create a nanoenergetic porous silicon composite.

Abstract translation: 由直径小于3nm的孔组成的多孔硅（PS）膜是使用不需要外部电源的电镀蚀刻方法制造的。 然后通过用强氧化剂，高氯酸钠（NaClO4）浸渍纳米尺度孔来产生高反应性的纳米能复合材料。 能量复合材料的燃烧传播速度使用微加工诊断装置结合高达每秒930,000帧的高速光学成像来测量。 对于具有约840m 2 / g的特定面积和约65-67％的孔隙率的PS膜，观察到平均为3050m / s的燃烧速度。 也可以使用电蚀刻来制造其它多孔硅形态，并且还可以使用NaClO 4以外的强氧化剂来形成纳米能多孔硅复合材料。