公开(公告)号：US20210230741A1

公开(公告)日：2021-07-29

申请号：US16966661

申请日：2019-12-11

Applicant: ULVAC, INC.

Inventor： Shuji Kodaira ,  Teppei Takahashi ,  Takahiro Tobiishi ,  Norifumi Yamamura ,  Hiroaki Katagiri ,  Junya Kubo ,  Masaaki Suzuki

IPC: C23C14/54 ,  H01L21/66 ,  C23C14/34

Abstract: A method of forming a film of this invention includes: rotating, inside a vacuum chamber, a to-be-processed substrate with a center of the to-be-processed substrate, while revolving the to-be-processed substrate on the same plane about a revolution shaft; and feeding a film-forming material from a film-forming source to form a predetermined thin film on a surface of the to-be-processed substrate. Provided that a goal film thickness of the thin film to be formed be defined as T, and that a film thickness of the thin film to be formed on the to-be-processed substrate in one revolution period be defined as D, the method further includes a setting process for setting a ratio α of rotation angular velocity Ωrot to a revolution angular velocity Ωrev of the to-be-processed substrate to a value satisfying the following formula (1) α≥6/log10(T/D)  (1)