-
公开(公告)号：US11043460B2
公开(公告)日：2021-06-22
申请号：US17000365
申请日：2020-08-23
发明人： Yu-Wei Cheng , Bo-Jou Lu , Chun-Chi Yu
IPC分类号： H01L23/544 , H01L21/66
摘要： An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.
-
公开(公告)号：US10811362B2
公开(公告)日：2020-10-20
申请号：US16243083
申请日：2019-01-09
发明人： Yu-Wei Cheng , Bo-Jou Lu , Chun-Chi Yu
IPC分类号： H01L23/544 , H01L21/66
摘要： An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.
-
公开(公告)号：US20200219821A1
公开(公告)日：2020-07-09
申请号：US16243083
申请日：2019-01-09
发明人： Yu-Wei Cheng , Bo-Jou Lu , Chun-Chi Yu
IPC分类号： H01L23/544 , H01L21/66
摘要： An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.
-
-
搜索结果
3 条记录 (耗时 0.011 秒)
