公开(公告)号：US20250089334A1

公开(公告)日：2025-03-13

申请号：US18379674

申请日：2023-10-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Chen-Ming Wang ,  Po-Ching Su ,  Pei-Hsun Kao ,  Ti-Bin Chen ,  Chun-Wei Yu ,  Chih-Chiang Wu

IPC: H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.