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公开(公告)号：US20250105166A1
公开(公告)日：2025-03-27
申请号：US18522206
申请日：2023-11-28
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chiao-Yi Teng , Kun-Ju Li
IPC: H01L23/544 , H01L21/768 , H01L23/00 , H01L23/538 , H01L25/065
Abstract: The invention provides a semiconductor structure, which comprises a first chip and a second chip attached to each other, wherein the first chip comprises a quantum dot pattern, and the second chip comprises a through silicon via (TSV), wherein the quantum dot pattern and the through silicon via are aligned with each other.
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