公开(公告)号：US10068900B1

公开(公告)日：2018-09-04

申请号：US15437824

申请日：2017-02-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin Yang ,  Chao-Sheng Cheng

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate having a high-voltage (HV) region; HV gate structures formed in the HV region of the substrate; a HV dummy pattern disposed in the HV region, and the HV dummy pattern comprising at least a semiconductor portion and a dummy HM stack disposed on the semiconductor portion, wherein a height (hS) of the semiconductor portion of the HV dummy pattern is smaller than a height (hHV-g) of a HV gate electrode of one of the HV gate structures.

公开(公告)号：US20180240798A1

公开(公告)日：2018-08-23

申请号：US15437824

申请日：2017-02-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin Yang ,  Chao-Sheng Cheng

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L21/823437 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7801

Abstract: A semiconductor device includes a substrate having a high-voltage (HV) region; HV gate structures formed in the HV region of the substrate; a HV dummy pattern disposed in the HV region, and the HV dummy pattern comprising at least a semiconductor portion and a dummy HM stack disposed on the semiconductor portion, wherein a height (hS) of the semiconductor portion of the HV dummy pattern is smaller than a height (hHV-g) of a HV gate electrode of one of the HV gate structures.