公开(公告)号：US08765495B1

公开(公告)日：2014-07-01

申请号：US13863397

申请日：2013-04-16

Applicant: United Microelectronics Corp.

Inventor： Yi-Hsiu Lee ,  Guo-Xin Hu ,  Qiao-Yuan Liu ,  Yen-Sheng Wang

IPC: H01L21/00

CPC classification number: H01L21/266 ,  G03F1/36 ,  G03F7/70441 ,  H01L21/26513 ,  H01L21/28123

Abstract: A method of forming a pattern of doped region includes the following steps. At first, a device layout pattern including a gate layout pattern and a doped region layout pattern is provided to a computer system. Subsequently, the device layout pattern is split into a plurality of sub regions, and the sub regions have different pattern densities of the gate layout pattern. Then, at least an optical proximity correction (OPC) calculation is respectively performed on the doped region layout pattern in each of the sub regions to respectively form a corrected sub doped region layout pattern in each of the sub regions. Afterwards, the corrected sub doped region layout patterns are combined to form a corrected doped region layout pattern, and the corrected doped region layout pattern is outputted onto a mask through the computer system.

Abstract translation: 形成掺杂区域图案的方法包括以下步骤。 首先，将包括栅极布局图案和掺杂区域布局图案的器件布局图案提供给计算机系统。 随后，器件布局图案被分割成多个子区域，并且子区域具有不同的栅极布局图案的图案密度。 然后，分别对每个子区域中的掺杂区域布局图案进行至少光学邻近校正（OPC）计算，以分别在每个子区域中形成校正的子掺杂区域布局图案。 之后，校正的子掺杂区域布局图案被组合以形成校正的掺杂区域布局图案，并且通过计算机系统将校正的掺杂区域布局图案输出到掩模上。

公开(公告)号：US11927887B2

公开(公告)日：2024-03-12

申请号：US17348806

申请日：2021-06-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Guo-Xin Hu ,  Yuh-Kwei Chao ,  Chung-Yi Chiu

IPC: G03F7/00 ,  G06F18/214 ,  G06N20/00 ,  G06T7/00 ,  G06V10/44

CPC classification number: G03F7/70441 ,  G06F18/214 ,  G06N20/00 ,  G06T7/0004 ,  G06V10/44 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: An optical proximity correction (OPC) operation method and an OPC operation device are provided. The OPC operation method includes the following steps. A mask layout is obtained. If the mask layout contains at least one defect hotspot, at least one partial area pattern is extracted from the mask layout according to the at least defect hotspot. A machine learning model is used to analyze the local area pattern to obtain at least one OPC strategy. The OPC strategy is implemented to correct the mask layout.