公开(公告)号：US09589846B1

公开(公告)日：2017-03-07

申请号：US15006053

申请日：2016-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Yu Tsai ,  Wei-Hsin Liu ,  Han-Sheng Huang

IPC: H01L21/82 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/823462 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833

Abstract: A method for forming a semiconductor device is provided. First, a dielectric layer is provided on a substrate, wherein a first recess and a second recess are formed in the dielectric layer. After a mask layer is filled into the first recess and the second recess, the mask layer in the second recess is removed away, thereby forming a patterned mask layer. Subsequently, a nitride treatment is performed to remove unwanted residue of the mask layer in the second recess.

Abstract translation: 提供一种形成半导体器件的方法。 首先，在基板上设置电介质层，其中在电介质层中形成有第一凹部和第二凹部。 在将掩模层填充到第一凹部和第二凹部中之后，将第二凹部中的掩模层去除，从而形成图案化掩模层。 随后，进行氮化处理以去除第二凹陷中的掩模层的不需要的残留物。