公开(公告)号：US10147614B1

公开(公告)日：2018-12-04

申请号：US15865162

申请日：2018-01-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Shao-Hui Wu ,  Hsiao Yu Chia ,  Yu-Cheng Tung

IPC: H01L21/441 ,  H01L21/304 ,  H01L21/768 ,  H01L29/66 ,  H01L29/24 ,  H01L29/78 ,  H01L23/00 ,  H01L29/786

Abstract: A method of manufacturing an oxide semiconductor transistor is provided in the present invention, which includes the step of providing an oxide semiconductor transistor on the front side of a substrate, attaching a wafer on the front side of the substrate, forming a contact hole extending from the back side of the substrate to the oxide semiconductor layer of the oxide semiconductor transistor, and filling the contact hole with metal material to form a back gate of the oxide semiconductor transistor.

公开(公告)号：US10403743B2

公开(公告)日：2019-09-03

申请号：US15655881

申请日：2017-07-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Shao-Hui Wu ,  Hsiao Yu Chia ,  Yu-Cheng Tung

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/465

Abstract: A manufacturing method of an oxide semiconductor device includes the following steps. A first oxide semiconductor layer is formed on a substrate. A gate insulation layer is formed on the first oxide semiconductor layer. A first flattening process is performed on a top surface of the first oxide semiconductor layer before the step of forming the gate insulation layer. A roughness of the top surface of the first oxide semiconductor layer after the first flattening process is smaller than the roughness of the top surface of the first oxide semiconductor layer before the first flattening process.