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公开(公告)号：US20170323880A1
公开(公告)日：2017-11-09
申请号：US15188962
申请日：2016-06-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kun-Yu Tai , Li-Cih Wang , Tien-Hao Tang
CPC classification number: H01L27/0277 , H01L29/0623 , H01L29/0653
Abstract: A semiconductor device for electrostatic discharge (ESD) protection includes a doped well, a drain region, a source region, a first doped region and a guard ring. The doped well is disposed in a substrate and has a first conductive type. The drain region is disposed in the doped well and has a second conductive type. The source region is disposed in the doped well and has the second conductive type, wherein the source region is separated from the drain region. The doped region is disposed in the doped well between the drain region and the source region, wherein the doped region has the first conductive type and is in contact with the doped well and the source region. The guard ring is disposed in the doped well and has the first conductive type.
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公开(公告)号：US09876006B2
公开(公告)日：2018-01-23
申请号：US15188962
申请日：2016-06-21
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Kun-Yu Tai , Li-Cih Wang , Tien-Hao Tang
CPC classification number: H01L27/0277 , H01L29/0623 , H01L29/0653
Abstract: A semiconductor device for electrostatic discharge (ESD) protection includes a doped well, a drain region, a source region, a first doped region and a guard ring. The doped well is disposed in a substrate and has a first conductive type. The drain region is disposed in the doped well and has a second conductive type. The source region is disposed in the doped well and has the second conductive type, wherein the source region is separated from the drain region. The doped region is disposed in the doped well between the drain region and the source region, wherein the doped region has the first conductive type and is in contact with the doped well and the source region. The guard ring is disposed in the doped well and has the first conductive type.
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