公开(公告)号：US20160172190A1

公开(公告)日：2016-06-16

申请号：US14571249

申请日：2014-12-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hung-Lin Shih ,  Chueh-Yang Liu ,  Shao-Wei Wang ,  Che-Hung Huang ,  Po-Hua Jen ,  Shih-Hao Su

IPC: H01L21/02 ,  H01L21/283

CPC classification number: H01L21/28211 ,  H01L21/76224 ,  H01L21/823462

Abstract: A gate oxide formation process includes the following steps. A first gate oxide layer is formed on a substrate. The first gate oxide layer is thinned to a first predetermined thickness. The first gate oxide layer is then thickened to a second predetermined thickness, to thereby form a second gate oxide layer.

Abstract translation: 栅极氧化物形成工艺包括以下步骤。 在基板上形成第一栅氧化层。 第一栅极氧化物层被薄化到第一预定厚度。 然后将第一栅极氧化物层增厚至第二预定厚度，从而形成第二栅极氧化物层。