公开(公告)号：US20250008849A1

公开(公告)日：2025-01-02

申请号：US18221385

申请日：2023-07-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Min Ting ,  Chuan-Fu Wang ,  Yu-Huan Yeh

IPC: H10N70/00 ,  H10B63/00 ,  H10N70/20

Abstract: A resistive switching device includes a substrate, a first dielectric layer on the substrate, a conductive via in the first dielectric layer, a bottom electrode on the conductive via and the first dielectric layer, a resistive switching layer on the bottom electrode, a spacer covering a sidewall of the resistive switching layer and a sidewall of the bottom electrode, and a top electrode capping the spacer and the resistive switching layer.