公开(公告)号：US20160322299A1

公开(公告)日：2016-11-03

申请号：US14731394

申请日：2015-06-04

Applicant: United Microelectronics Corp.

Inventor： Chun-Chi Huang ,  Yung-Hung Yen ,  Hsin-Hsing Chen ,  Chih-Yueh Li ,  Tsun-Min Cheng

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53295

Abstract: A semiconductor device includes an opening, a metal nitride layer, a bilayer metal layer and a conductive bulk layer. The opening is disposed in a first dielectric layer. The metal nitride layer is disposed in the opening. The bilayer metal layer is disposed on the metal nitride layer in the opening, where the bilayer metal layer includes a first metal layer and a second metal layer which is disposed on the first metal layer and has a greater metal concentration than that of the first metal layer. The conductive bulk layer is filled in the opening.

Abstract translation: 半导体器件包括开口，金属氮化物层，双层金属层和导电体层。 开口设置在第一电介质层中。 金属氮化物层设置在开口中。 双层金属层设置在开口中的金属氮化物层上，其中双层金属层包括第一金属层和设置在第一金属层上并且具有比第一金属的金属浓度更大的金属浓度的第二金属层 层。 导电体层填充在开口中。

公开(公告)号：US09548268B2

公开(公告)日：2017-01-17

申请号：US14731394

申请日：2015-06-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Chi Huang ,  Yung-Hung Yen ,  Hsin-Hsing Chen ,  Chih-Yueh Li ,  Tsun-Min Cheng

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53295

Abstract: A semiconductor device includes an opening, a metal nitride layer, a bilayer metal layer and a conductive bulk layer. The opening is disposed in a first dielectric layer. The metal nitride layer is disposed in the opening. The bilayer metal layer is disposed on the metal nitride layer in the opening, where the bilayer metal layer includes a first metal layer and a second metal layer which is disposed on the first metal layer and has a greater metal concentration than that of the first metal layer. The conductive bulk layer is filled in the opening.

Abstract translation: 半导体器件包括开口，金属氮化物层，双层金属层和导电体层。 开口设置在第一电介质层中。 金属氮化物层设置在开口中。 双层金属层设置在开口中的金属氮化物层上，其中双层金属层包括第一金属层和设置在第一金属层上并且具有比第一金属的金属浓度更大的金属浓度的第二金属层 层。 导电体层填充在开口中。