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公开(公告)号：US20230070135A1
公开(公告)日：2023-03-09
申请号：US17489813
申请日：2021-09-30
Applicant: UNITED MICROELECTRONICS CORP.
IPC: H01L29/66 , H01L29/78 , H01L21/324 , H01L21/02
Abstract: The invention provides a method for forming a semiconductor structure. The method includes providing a substrate, forming a gate structure on the substrate, respectively forming an epitaxial layer on both sides of the gate structure, and performing a pre-amorphization doping step on the substrate. After the pre-amorphization doping step, a defect is generated in the epitaxial layer, an outer spacer is formed beside the gate structure, and a chemical cleaning step is performed to remove a part of the epitaxial layer, and the defect in the epitaxial layer is removed.
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