公开(公告)号：US10818356B2

公开(公告)日：2020-10-27

申请号：US16263604

申请日：2019-01-31

申请人： UNITED SEMICONDUCTOR JAPAN CO., LTD

发明人： Satoshi Torii ,  Shu Ishihara

IPC分类号： G11C16/04 ,  H01L27/11529 ,  H01L27/11524 ,  G11C16/26

摘要： A nonvolatile semiconductor memory device includes a selection transistor and a memory transistor that are formed on a well for each of a plurality of memory cells. At a time of a data read from the memory transistor, a first voltage is applied to the well and a source of the memory transistor, and a second voltage is applied to a gate of the selection transistor included in a non-selected memory cell among the plurality of memory cells. The first voltage is smaller than an absolute value of the second voltage.